Showing posts with label semiconductors. Show all posts
Showing posts with label semiconductors. Show all posts

Monday, March 7, 2016

Step towards ‘holy grail’ of silicon photonics



Creation of first practical silicon-based laser has the potential to transform communications, healthcare and energy systems

A group of researchers from the UK, including academics from Cardiff University, has demonstrated the first practical laser that has been grown directly on a silicon substrate.

It is believed the breakthrough could lead to ultra-fast communication between computer chips and electronic systems and therefore transform a wide variety of sectors, from communications and healthcare to energy generation.

The EPSRC-funded UK group, led by Cardiff University and including researchers from UCL and the University of Sheffield, have presented their findings in the journal Nature Photonics.

Silicon is the most widely used material for the fabrication of electronic devices and is used to fabricate semiconductors, which are embedded into nearly every device and piece of technology that we use in our everyday lives, from smartphones and computers to satellite communications and GPS.

Electronic devices have continued to get quicker, more efficient and more complex, and have therefore placed an added demand on the underlining technology.

Researchers have found it increasingly difficult to meet these demands using conventional electrical interconnects between computer chips and systems, and have therefore turned to light as a potential ultra-fast connector.

Whilst it has been difficult to combine a semiconductor laser – the ideal source of light – with silicon, the UK group have now overcome these difficulties and successfully integrated a laser directly grown onto a silicon substrate for the very first time.

Professor Huiyun Liu, who led the growth activity, explained that the 1300 nm wavelength laser has been shown to operate at temperatures of up to 120°C and for up to 100,000 hours.

Professor Peter Smowton, from the School of Physics and Astronomy, said: “Realising electrically-pumped lasers based on Si substrates is a fundamental step towards silicon photonics.

“The precise outcomes of such a step are impossible to predict in their entirety, but it will clearly transform computing and the digital economy, revolutionise healthcare through patient monitoring, and provide a step-change in energy efficiency.

“Our breakthrough is perfectly timed as it forms the basis of one of the major strands of activity in Cardiff University’s Institute for Compound Semiconductors and the University’s joint venture with compound semiconductor specialists IQE.”

Professor Alwyn Seeds, Head of the Photonics Group at University College London, said: “The techniques that we have developed permit us to realise the Holy Grail of silicon photonics - an efficient and reliable electrically driven semiconductor laser directly integrated on a silicon substrate. Our future work will be aimed at integrating these lasers with waveguides and drive electronics leading to a comprehensive technology for the integration of photonics with silicon electronics"

Monday, February 8, 2016

Nanoscale cavity strongly links quantum particles


Scientists have created a crystal structure that boosts the interaction between tiny bursts of light and individual electrons, an advance that could be a significant step toward establishing quantum networks in the future.

Today’s networks use electronic circuits to store information and optical fibers to carry it, and quantum networks may benefit from a similar framework. Such networks would transmit qubits – quantum versions of ordinary bits – from place to place and would offer unbreakable security for the transmitted information. But researchers must first develop ways for qubits that are better at storing information to interact with individual packets of light called photons that are better at transporting it, a task achieved in conventional networks by electro-optic modulators that use electronic signals to modulate properties of light.

Now, researchers in the group of Edo Waks, a fellow at JQI and an Associate Professor in the Department of Electrical and Computer Engineering at the University of Maryland, have struck upon an interface between photons and single electrons that makes progress toward such a device. By pinning a photon and an electron together in a small space, the electron can quickly change the quantum properties of the photon and vice versa. The research was reported online Feb. 8 in the journal Nature Nanotechnology.

“Our platform has two major advantages over previous work,” says Shuo Sun, a graduate student at JQI and the first author of the paper. “The first is that the electronic qubit is integrated on a chip, which makes the approach very scalable. The second is that the interactions between light and matter are fast. They happen in only a trillionth of a second – 1,000 times faster than previous studies.”

CONSTRUCTING AN INTERFACE

The new interface utilizes a well-studied structure known as a photonic crystal to guide and trap light. These crystals are built from microscopic assemblies of thin semiconductor layers and a grid of carefully drilled holes. By choosing the size and location of the holes, researchers can control the properties of the light traveling through the crystal, even creating a small cavity where photons can get trapped and bounce around.

”These photonic crystals can concentrate light in an extremely small volume, allowing devices to operate at the fundamental quantum limit where a single photon can make a big difference,” says Waks.

The results also rely on previous studies of how small, engineered nanocrystals called quantum dots can manipulate light. These tiny regions behave as artificial atoms and can also trap electrons in a tight space. Prior work from the JQI group showed that quantum dots could alter the properties of many photons and rapidly switch the direction of a beam of light.

The new experiment combines the light-trapping of photonic crystals with the electron-trapping of quantum dots. The group used a photonic crystal punctuated by holes just 72 nanometers wide, but left three holes undrilled in one region of the crystal. This created a defect in the regular grid of holes that acted like a cavity, and only those photons with only a certain energy could enter and leave.

Inside this cavity, embedded in layers of semiconductors, a quantum dot held one electron. The spin of that electron – a quantum property of the particle that is analogous to the motion of a spinning top – controlled what happened to photons injected into the cavity by a laser. If the spin pointed up, a photon entered the cavity and left it unchanged. But when the spin pointed down, any photon that entered the cavity came out with a reversed polarization – the direction that light’s electric field points. The interaction worked the opposite way, too: A single photon prepared with a certain polarization could flip the electron’s spin.


Both processes are examples of quantum switches, which modify the qubits stored by the electron and photon in a controlled way. Such switches will be the coin of the realm for proposed future quantum computers and quantum networks.

QUANTUM NETWORKING

Those networks could take advantage of the strengths that photons and electrons offer as qubits. In the future, for instance, electrons could be used to store and process quantum information at one location, while photons could shuttle that information between different parts of the network.
Such links could enable the distribution of entanglement, the enigmatic connection that groups of distantly separated qubits can share. And that entanglement could enable other tasks, such as performing distributed quantum computations, teleporting qubits over great distances or establishing secret keys that two parties could use to communicate securely.

Before that, though, Sun says that the light-matter interface that he and his colleagues have created must create entanglement between the electron and photon qubits, a process that will require more accurate measurements to definitively demonstrate.

“The ultimate goal will be integrating photon creation and routing onto the chip itself,” Sun says. “In that manner we might be able to create more complicated quantum devices and quantum circuits.”
In addition to Waks and Sun, the paper has two additional co-authors: Glenn Solomon, a JQI fellow, and Hyochul Kim, a post-doctoral researcher in the Department of Electrical and Computer Engineering at the University of Maryland.


Thursday, January 28, 2016

Argonne-UChicago researchers work to annihilate nanoscale defects in semiconductors

Researchers from the University of Chicago and Argonne use the supercomputing resources at the Argonne Leadership Computing Facility to predict the path molecules must follow to find defect-free states. They designed a process that delivers industry-standard nanocircuitry that can be scaled down to smaller densities without defects.
Courtesy of Argonne National Laboratory

Target dates are critical when the semiconductor industry adds small, enhanced features to consumer devices by integrating advanced materials onto the surfaces of computer chips. Missing a target means postponing a device’s release, which could cost a company millions of dollars or the loss of competitiveness and an entire industry.

But meeting target dates can be challenging because the final integrated devices, which include billions of transistors, must be flawless—less than one defect per 100 square centimeters.

Researchers at the University of Chicago and Argonne National Laboratory, led by Profs. Juan de Pablo and Paul Nealey, may have found a way for the semiconductor industry to hit miniaturization targets on time and without defects.

To make microchips, de Pablo and Nealey’s technique includes creating patterns on semiconductor surfaces that allow block copolymer molecules to self-assemble into specific shapes, but thinner and at much higher densities than those of the original pattern. The researchers can then use a lithography technique to create nano-trenches where conducting wire materials can be deposited.

This is a stark contrast to the industry practice of using homo-polymers in complex “photoresist” formulations, where researchers have “hit a wall,” unable to make the material smaller.

Before they could develop their new fabrication method, however, de Pablo and Nealey needed to understand exactly how block copolymers self-assemble when coated onto a patterned surface—their concern being that certain constraints cause copolymer nanostructures to assemble into undesired metastable states. To reach the level of perfection demanded to fabricate high-precision nanocircuitry, the team had to eliminate some of these metastable states.

Using the Argonne Leadership Computing Facility, UChicago and Argonne researchers have found a way miniaturize microchip components using a technique producing zero defects. This advance will allow semiconductor manufacturers to meet miniaturization target dates to produce smaller components with added functionality for consumer devices.
Courtesy of Argonne National Laboratory

To imagine how block copolymers assemble, it may be helpful to picture an energy landscape consisting of mountains and valleys, in which some valleys are deeper than others. The system prefers defect-free stability, which can be characterized by the deepest (low-energy) valleys, if they can be found. However, systems can get trapped inside higher (medium-energy) valleys, called metastable states, which have more defects.

To move from a metastable to stable state, block copolymer molecules must find ways to climb over the mountains and find lower energy valleys.

“Molecules in these metastable states are comfortable, and they can remain in that state for extraordinarily long periods of time,” said de Pablo.

“In order to escape such states and attain a perfect arrangement, they need to start rearranging themselves in a manner that allows the system to climb over local energy barriers, before reaching a lower energy minimum. What we have done in this work is predict the path these molecules must follow to find defect-free states and designed a process that delivers industry-standard nanocircuitry that can be scaled down to smaller densities without defects.”

Supported by a DOE leadership computing grant, de Pablo and his team used the Mira and Fusion supercomputers at the Argonne Leadership Computing Facility. The team generated molecular simulations of self-assembling block polymers along with sophisticated sampling algorithms to calculate where barriers to structural rearrangement would arise in the material. 

After all the calculations were done, the researchers could precisely predict the pathways of molecular rearrangement that block copolymers must take to move from a metastable to stable state. They could also experiment with temperatures, solvents and applied fields to further manipulate and decrease the barriers between these states.

To test these calculations, de Pablo and Nealey partnered with IMEC, an international consortium located in Belgium. Their commercial-grade fabrication and characterization instruments helped the researchers perform experiments under conditions that are not available in academic laboratories.

An individual defect measures only a handful of nanometers; “finding a defect in a 100-square centimeter area is like finding a needle in hay stack, and there are only a few places in the world where one has access to the necessary equipment to do so,” said de Pablo.

“Manufacturers have long been exploring the feasibility of using block copolymer assembly to reach the small critical dimensions that are demanded by modern computing and higher data storage densities,” de Pablo said. “Their biggest challenge involved evaluating defects; by following the strategies we have outlined, that challenge is greatly diminished.”

John Neuffer, president and CEO of the Semiconductor Industry Association, said industry is relentlessly focused on designing and building chips that are smaller, more powerful and more energy-efficient.

“The key to unlocking the next generation of semiconductor innovation is research,” he said. “SIA commends the work done by Argonne National Laboratory and the University of Chicago, as well as other critical scientific research being done across the United States.”

De Pablo, Nealey and their team will continue their investigations with a wider class of materials, increasing the complexity of patterns and characterizing materials in greater detail while also developing methods based on self-assembly for fabrication of three-dimensional structures.
Their long-term goal, with support from the DOE’s Office of Science, is to arrive at an understanding of directed self-assembly of polymeric molecules that will enable creation of wide classes of materials with exquisite control over their nanostructure and functionality for applications in energy harvesting, storage and transport.

Wednesday, January 20, 2016

Watching Electrons Cool in 30 Quadrillionths of a Second


Two University of California, Riverside assistant professors of physics are among a team of researchers that have developed a new way of seeing electrons cool off in an extremely short time period.

The development could have applications in numerous places where heat management is important, including visual displays, next-generation solar cells and photodetectors for optical communications.

In visual displays, such as those used in cell phones and computer monitors, and photodetectors, which have a wide variety of applications including solar energy harvesting and fiber optic telecommunications, much of the energy of the electrons is wasted by heating the material.

Controlling the flow of heat in the electrons, rather than wasting this energy by heating the material, could potentially increase the efficiency of such devices by converting excess energy into useful power.

The research is outlined in a paper, “Tuning ultrafast electron thermalization pathways in a van der Waals heterostructure,” published online Monday (Jan. 18) in the journal Nature Physics. Nathan Gabor and Joshua C.H. Lui, assistant professors of physics at UC Riverside, are among the co-authors.

In electronic materials, such as those used in semiconductors, electrons can be rapidly heated by pulses of light.  The time it takes for electrons to cool each other off is extremely short, typically less than 1 trillionth of a second.

To understand this behavior, researchers use highly specialized tools that utilize ultra-fast laser techniques. In the two-dimensional material graphene cooling excited electrons occurs even faster, taking only 30 quadrillionths of a second. Previous studies struggled to capture this remarkably fast behavior.


To solve that, the researchers used a completely different approach. They combined single layers of graphene with thin layers of insulating boron nitride to form a sandwich structure, known as a van der Waals heterostructure, which gives electrons two paths to choose from when cooling begins. Either the electrons stay in graphene and cool by bouncing off one another, or they get sucked out of graphene and move through the surrounding layer.

By tuning standard experimental knobs, such as voltage and optical pulse energy, the researchers found they can precisely control where the electrons travel and how long they take to cool off. The work provides new ways of seeing electrons cool off at extremely short time scales, and demonstrates novel devices for nanoscale optoelectronics.

This structure is one of the first in a new class of devices that are synthesized by mechanically stacking atomically thin membranes. By carefully choosing the materials that make up the device, the researchers developed a new type of optoelectronic photodetector that is only 10 nanometers thick. Such devices address the technological drive for ultra-dense, low-power, and ultra-efficient devices for integrated circuits.

The research follows advances made in 2011 Science article, in which the research team discovered the fundamental importance of hot electrons in the optoelectronic response of devices based on graphene.

Other co-authors of the Nature Physics paper are: Qiong Ma, Trond I. Andersen, Nityan L. Nair, Andrea F. Young, Wenjing Fang, Jing Kong, Nuh Gedik and Pablo Jarillo-Herrero, all of the Massachusetts Institute of Technology; Mathieu Massicotte and Frank H. L. Koppens, both of The Institute of Photonic Sciences in Spain; and Kenji Watanabe and Takashi Taniguchi, both of the National Institute for Materials Science in Japan.


Wednesday, December 9, 2015

Nanostructured metal coatings let the light through for electrical devices

An array of nanopillars etched by thin layer of grate-patterned metal creates a nonreflective yet conductive surface that could improve electronic device performance. Image courtesy of Daniel Wasserman
Light and electricity dance a complicated tango in devices like LEDs, solar cells and sensors. A new anti-reflection coating developed by engineers at the University of Illinois at Urbana Champaign, in collaboration with researchers at the University of Massachusetts at Lowell, lets light through without hampering the flow of electricity, a step that could increase efficiency in such devices.

The coating is a specially engraved, nanostructured thin film that allows more light through than a flat surface, yet also provides electrical access to the underlying material – a crucial combination for optoelectronics, devices that convert electricity to light or vice versa. The researchers, led by U. of I. electrical and computer engineering professor Daniel Wasserman, published their findings in the journal Advanced Materials.

“The ability to improve both electrical and optical access to a material is an important step towards higher-efficiency optoelectronic devices,” said Wasserman, a member of the Micro and Nano Technology Laboratory at Illinois.

At the interface between two materials, such as a semiconductor and air, some light is always reflected, Wasserman said. This limits the efficiency of optoelectronic devices. If light is emitted in a semiconductor, some fraction of this light will never escape the semiconductor material.

Alternatively, for a sensor or solar cell, some fraction of light will never make it to the detector to be collected and turned into an electrical signal. Researchers use a model called Fresnel’s equations to describe the reflection and transmission at the interface between two materials.
“It has been long known that structuring the surface of a material can increase light transmission,” said study co-author Viktor Podolskiy, a professor at the University of Massachusetts at Lowell.

“Among such structures, one of the more interesting is similar to structures found in nature, and is referred to as a ‘moth-eye’ pattern: tiny nanopillars which can ‘beat’ the Fresnel equations at certain wavelengths and angles.”

Although such patterned surfaces aid in light transmission, they hinder electrical transmission, creating a barrier to the underlying electrical material.

“In most cases, the addition of a conducting material to the surface results in absorption and reflection, both of which will degrade device performance,” Wasserman said.

The Illinois and Massachusetts team used a patented method of metal-assisted chemical etching, MacEtch, developed at Illinois by Xiuling Li, U. of I. professor of electrical and computer engineering and co-author of the new paper. The researchers used MacEtch to engrave a patterned metal film into a semiconductor to create an array of tiny nanopillars rising above the metal film. The combination of these “moth-eye” nanopillars and the metal film created a partially coated material that outperformed the untreated semiconductor.    

“The nanopillars enhance the optical transmission while the metal film offers electrical contact. Remarkably, we can improve our optical transmission and electrical access simultaneously,” said Runyu Liu, a graduate researcher at Illinois and a co-lead author of the work along with Illinois graduate researcher Xiang Zhao and Massachusetts graduate researcher Christopher Roberts.
The researchers demonstrated that their technique, which results in metal covering roughly half of the surface, can transmit about 90 percent of light to or from the surface. For comparison, the bare, unpatterned surface with no metal can only transmit 70 percent of the light and has no electrical contact.

The researchers also demonstrated their ability to tune the material’s optical properties by adjusting the metal film’s dimensions and how deeply it etches into the semiconductor.
“We are looking to integrate these nanostructured films with optoelectronic devices to demonstrate that we can simultaneously improve both the optical and electronic properties of devices operating at wavelengths from the visible all the way to the far infrared,” Wasserman said.

The National Science Foundation and Lam Research supported this work.